Pioneering work on the synthesis and properties of these MC NS have been reported over the past few years.reported the 2D single-sheet GaS and GaSe transistors via a micromechanical cleavage technique, demonstrating excellent electron differential mobility.obtained ultrathin GaSe NS by mechanical cleavage-solvent exfoliation method, which demonstrated fast response, high responsivity and quantum efficiency in photodetectors. The layered GaSe NS can also be used as a Li-ion battery (LiB) anode reported multilayer GaTe flakes which exhibit a higher photoresponsivity than graphene, MoS2, and other layered compounds, showing promising applications in optoelectronic and photosensitive devices.
2D InSe ultrathin sheets have been reported as a promising candidate in optoelectronic devices, such as field-effect transistors and highly responsive photodetectors fabricated few-layered InSe on rigid (SiO2/Si plate) and flexible (polyethylene terephthalate) substrates, yielding superior photoresponsivities of conducting broad band photodetection from 450 to 785 nm.
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